A comparison of Al2O3/HfO2 and Al 2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications

被引：0
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作者：
Kim, Inhoe [1 ]
Koo, Jaehyoung [1 ]
Lee, Janghee [1 ]
Jeon, Hyeongtag [1 ]
机构：
[1] Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 45卷 / 2 A期
关键词：
17;
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学科分类号：
摘要：
Journal article (JA)
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页码：919 / 925
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