A simple treatment of quantum dissipative transport in carbon nanotube transistors

被引：1
|
作者：
Ossaimee, Mahmoud [1 ]
Gamal, Salah H. [1 ]
机构：
[1] Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt
来源：
International Journal of Nanomanufacturing | 2009年 / 4卷 / 1-4期
关键词：
D O I：
10.1504/IJNM.2009.028136
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：283 / 289
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