Radio-frequency influences on Cu film deposited by unbalanced magnetron sputtering

Metallic copper films are deposited on Si100 substrate by radio-frequency plasma enhanced unbalanced magnetron sputtering, and film performance is studied by changing deposition parameters such as bias voltage, rf power and magnetron. The morphology, structure and element of the films are examined by scanning electron microscopy, atomic force microscope (AFM), X-ray diffraction (XRD) and electron spectroscopy (EM). The results show that rf discharge has advantages in depositing equality smooth and high conductivity Cu film and deposition parameters are important for film performance.