Optical properties of AlInN thin films

被引：0

作者：

Jiang L.-F. ^{[1
]}

Shen W.-Z. ^{[1
]}

Guo Q.-X. ^{[2
]}

机构：

[1] Key Laboratory of Artificial Structures and Quantum Control (Minister of Education), Department of Physics, Shanghai Jiaotong University

[2] Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University

来源：

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2011年 / 30卷 / 03期

关键词：

AlInN thin film; Optical property; Temperature-dependence;

D O I：

10.3724/sp.j.1010.2011.00207

中图分类号：

学科分类号：

摘要：

Transmission and reflection measurements have been carried out on AlInN thin films. With the aid of a detailed procedure developed for analyzing the spectra, we obtained the effects of temperature on the optical properties of AlInN, such as the absorption coefficient, band-gap, Urbach bandtail characteristics, and refractive index. The absorption coefficient of the complete Urbach and intrinsic absorption regions of InN thin films has been described by a series of empirical formulas. The refractive index dispersion of AlN thin films below the band gap can be described by the Sellmeier equation. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the bandtail characteristics of AlInN thin films. We have also investigated Raman spectroscopy of AlInN thin films, with the emphasis on temperature dependence of phonon frequencies, which can be described well by a model taking into account the contributions of the thermal expansion of the crystal lattice, the strain between AlInN thin films and sapphire substrates, as well as three-and four-phonon coupling. These optical properties provide an experimental basis for further theoretical investigation and the design of AlInN-based devices.

引用

页码：207 / 211+241

共 13 条

[1] Jiang L.F., Shen W.Z., Ogawa H., Et al., Temperature dependence of the optical properties in hexagonal AlN, J. Appl. Phys., 94, pp. 5704-5709, (2003)
[2] Yamaguchi S., Kariya M., Nitta S., Et al., Anomalous features in the optical properties of AlxIn1-xN on GaN grown by metal organic vapor phase epitaxy, Appl. Phys. Lett., 76, pp. 876-878, (2000)
[3] Shamrell R.T., Parman C., Optical properties of reactively sputtered indium nitride thin films, Optical Materials, 13, pp. 289-292, (1999)
[4] Li F., Mo D., Cao C.B., Et al., Ellipsometry study of InN thin films prepared by magnetron sputtering, J. Materials Sci., 12, pp. 725-728, (2001)
[5] Brunner D., Angerer H., Bustarret E., Et al., Optical constants of epitaxial AlGaN films and their temperature dependence, J. Appl. Phys., 82, pp. 5090-5096, (1997)
[6] Huttel Y., Gomez H., Cebollada A., Et al., Epitaxial growth of AlN on sapphire (0001) by sputtering: A structural, morphological and optical study, J. Crystal Growth, 242, pp. 116-123, (2002)
[7] Joo H.Y., Kim H.J., Kim S.J., Et al., The optical and structural properties of AlN thin films characterized by spectroscopic ellipsometry, Thin Solid Films, 368, pp. 67-73, (2000)
[8] Djurisic A.B., Li E.H., Modeling the optical constants of hexagonal GaN, InN, and AlN, J. Appl. Phys., 85, pp. 2848-2853, (1999)
[9] Grille H., Schnittler Ch., Bechstedt F., Phonons in ternary group-nitride alloys, Phys. Rev. B, 61, pp. 6091-6105, (2000)
[10] Kang T.T., Hashimoto A., Yamamoto A., Raman scattering of indium-rich AlxIn1-xN: Unexpected two-mode behavior of A1 (LO), Phys. Rev. B, 79, pp. 1-4, (2009)

← 1 2 →