Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

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[1] Chu, Yueh-Chieh
[2] 1,Tzeng, Yonhua
[3] Auciello, Orlando
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| 1600年 / American Institute of Physics Inc.卷 / 115期
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Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation; growth; and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from -490 V to -375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from -375 V to -390 V for silicon pre-heated to 900 °C. Method C employs -350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars; merged clusters; and dense films with smooth surface morphology are deposited by the biasing methods A; B; and C; respectively. Effects of ion energy and flux controlled by the biasing voltage and current; respectively; on nucleation; microstructures; surface morphologies; and UNCD contents are confirmed by scanning electron microscopy; high-resolution transmission-electron-microscopy; and UV Raman scattering. © 2014 AIP Publishing LLC;
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