Ferroelectric memristor and its neuromorphic computing applications

被引：0

作者：

Du, Junmei ^{[1
]}

Sun, Bai ^{[2
]}

Yang, Chuan ^{[1
]}

Cao, Zelin ^{[2
]}

Zhou, Guangdong ^{[3
]}

Wang, Hongyan ^{[1
]}

Chen, Yuanzheng ^{[1
]}

机构：

[1] School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Sichuan, Chengdu,610031, China

[2] Frontier Institute of Science and Technology (FIST), Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Shaanxi, Xi'an,710049, China

[3] College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing,400715, China

来源：

Materials Today Physics | 2025年 / 50卷

关键词：

Polarization;

D O I：

10.1016/j.mtphys.2024.101607

中图分类号：

学科分类号：

摘要：

Ferroelectric memristors, characterized by spontaneous polarization ferroelectric materials as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours under a reversal electric field. This device demonstrates notable capability in the stable and precise emulation of synaptic and neuronal functions, analogous to those in the human brain, offering an attractive option for neuromorphic computing. With the development of nanotechnology and nano-ferroelectric materials, the advent of nano-ferroelectric memristors enables their incorporation into dense crossbar arrays, enhancing the density and efficiency of neuromorphic computing. In this review, we offer a comprehensive overview of ferroelectric memristor and its neuromorphic computing applications, including the recent progress, existing challenges and possible solutions, as well as future development direction. © 2024 Elsevier Ltd

引用

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