Asymmetrical Doherty amplifier using GaN HEMTs for high-power applications

被引：0
|
作者：
Kitahara, Takaya [1 ]
Yamamoto, Takashi [1 ]
Hiura, Shigeru [1 ]
机构：
[1] Toshiba Corporation, Corporate Manufacturing Engineering Center, Yokohama 235-0017, Japan
来源：
RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012 | 2012年
关键词：
Compendex;
D O I：
6174929
中图分类号：
学科分类号：
摘要：
Doherty amplifiers
引用
收藏
页码：57 / 60
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