Electronic transport in heavily Si doped cubic boron nitride films epitaxially grown on diamond(001)

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作者：
Yin, Hong [1 ]
Pongrac, Ivan [1 ]
Ziemann, Paul [1 ]
机构：
[1] Institute of Solid State Physics, University of Ulm, D-89069 Ulm, Germany
来源：
Journal of Applied Physics | 2008年 / 104卷 / 02期
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