Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node

被引：0
|
作者：
Miura, Atsushi [1 ]
Uraoka, Yukiharu [1 ]
Fuyuki, Takashi [1 ]
Yoshii, Shigeo [2 ]
Yamashita, Ichiro [1 ,2 ,3 ]
机构：
[1] Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma 630-0192, Japan
[2] Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., 3-4 Hikaridai, Kyoto 619-0237, Japan
[3] CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 07期
关键词：
Gate dielectrics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node
    Miura, Atsushi
    Uraoka, Yukiharu
    Fuyuki, Takashi
    Yoshii, Shigeo
    Yamashita, Ichiro
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
  • [2] Floating nanodot gate memory devices based on biomineralized inorganic nanodot array as a storage node
    Miura, A
    Hikono, T
    Matsumura, T
    Yano, H
    Hatayama, T
    Uraoka, Y
    Fuyuki, T
    Yoshii, S
    Yamashita, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (1-3): : L1 - L3
  • [3] Charge Effects of Ultrafine FET with Nanodot Type Floating Gate
    Ban, Takahiko
    Migita, Shinji
    Uraoka, Yukiharu
    Yamamoto, Shin-ichi
    [J]. 2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2016, : 29 - 30
  • [4] Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
    Lee, Gae-Hun
    Lee, Jung-Min
    Song, Yun Heub
    Bea, Ji Chel
    Tanaka, Tetsu
    Koyanagi, Mitsumasa
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)
  • [5] MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition
    Pei, Y.
    Yin, C.
    Bea, J. C.
    Kino, H.
    Fukushima, T.
    Tanaka, T.
    Koyanagi, M.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
  • [6] Ultrafine Intrinsic FET with Nanodot Type Floating Gate
    Ban, Takahiko
    Migita, Shinji
    Olamoto, Naofumi
    Uenuma, Mutsunori
    Uraoka, Yukiharu
    Yamamoto, Shin-ichi
    [J]. 2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2017, : 268 - 269
  • [7] Characteristics of a Multiple Alloy Nanodot Memory with an Enhanced Charge Storage Capability
    Song, Yun Heub
    Bea, Ji Chel
    Tanaka, Tetsu
    Koyanagi, Mitsumasa
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (07) : 0742011 - 0742015
  • [8] Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate
    Ban, Takahiko
    Migita, Shinji
    Uenuma, Mutsunori
    Okamoto, Naofumi
    Ishikawa, Yasuaki
    Uraoka, Yukiharu
    Yamashita, Ichiro
    Yamamoto, Shin-ichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (03)
  • [9] Formation and characterization of hybrid nanodot stack structure for floating gate application
    Miyazaki, Seiichi
    Makihara, Katsunori
    Ikeda, Mitsuhisa
    [J]. THIN SOLID FILMS, 2010, 518 : S30 - S34
  • [10] Quantized characteristics in carbon nanotube-based single-hole memory with a floating nanodot gate
    Ohori, Takahiro
    Ohno, Yasuhide
    Maehashi, Kenzo
    Inoue, Koichi
    Hayashi, Yutaka
    Matsumoto, Kazuhiko
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (22)
12345