Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

被引：0
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作者：
Zhu, Xin [1 ]
Deng, Hai [1 ]
Tang, Jun [2 ]
Xi, Zhenqiang [1 ]
Yang, Deren [1 ]
机构：
[1] Stale Key Lab. of Silicon Material Science, Zhejiang University, Hangzhou 310027, China
[2] Zhejiang Sino-Italian Photovoltaic Co. Ltd., Ningbo 315800, China
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2007年 / 28卷 / 12期
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页码：1300 / 1303
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