The dilute magnetic properties of monolayer MoS2 doped with transition metal Fe and VA atoms

被引：1
|
作者：
Lan, Lan [1 ]
Cao, Jiamu [1 ]
Cao, Yijiang [1 ]
Xu, Dianshuang [1 ]
Zhou, Jing [2 ]
机构：
[1] Department of Electronic Science and Technology, College of Applied Science, Harbin University of Science and Technology, Harbin, Heilongjiang, China
[2] School of Electronics and Information Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, China
来源：
Key Engineering Materials | 2015年 / 645卷
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
10.4028/www.scientific.net/KEM.645-646.15
中图分类号：
学科分类号：
摘要：
Density functional theory - Semiconductor doping - Titanium dioxide - Chemical bonds - Diluted magnetic semiconductors - Magnetic properties - Atoms - Layered semiconductors - Monolayers - Semiconductor devices - Calculations - Iron - Wide band gap semiconductors - Energy gap - Binary alloys - Magnetic moments
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页码：15 / 20
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