Interface-roughness parameters in InAs quantum wells determined from mobility

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作者：
Gold, A. [1 ]
机构：
[1] Centre d'Elaboration de Materiaux et d'Etudes Structurales (CEMES-CNRS), 29 Rue Jeanne Marvig, 31055 Toulouse, France
来源：
Journal of Applied Physics | 2008年 / 103卷 / 04期
关键词：
Carrier mobility - Metal insulator transition - Parameter estimation - Semiconductor quantum wells - Transport properties;
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摘要：
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