Novel approaches for fabricating high-performance low-temperature solution-processed metal oxide transistors

被引：0
|
作者：
Hsieh, Hsing-Hung [1 ]
Yu, Xinge [3 ]
Xia, Yu [2 ]
Sheets, Chris W. [2 ]
Hsiao, Chung-Chin [1 ,2 ]
Marks, Tobin J. [3 ]
Facchetti, And Antonio [2 ,3 ]
机构：
[1] Polyera Taiwan Corp., 4F-11, No. 38, Taiyuan St., Zhubei, Hsinchu 302, Taiwan
[2] Polyera Corp., 8045 Lamon Avenue, Skokie, IL 60077, United States
[3] Department of Chemistry, Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, United States
来源：
Digest of Technical Papers - SID International Symposium | 2014年 / 45卷 / 01期
关键词：
19;
D O I：
10.1002/j.2168-0159.2014.tb00115.x
中图分类号：
学科分类号：
摘要：
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页码：427 / 430
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