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Metal Interlayer Insertion for Grain Engineering in Ferroelectric Hf0.5Zr0.5O2

被引：0
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作者：
Nguyen, Anh-Duy [1 ,2 ]
Song, Si-Un [2 ]
Nguyen, An Hoang Thuy [1 ]
Nguyen, Cuong-Manh [1 ]
Hong, Ye-Eun [2 ]
Ham, Yeongshin [2 ]
Kim, Jae-Kyeong [3 ]
Baek, Jong-Hwa [2 ]
Hwang, Kyungsoo [2 ]
Park, Geon [3 ]
Kim, Hyun Soo [3 ]
Sin, Hoyeon [1 ]
Choi, Rino [1 ,3 ]
机构：
[1] Inha University, 3D Convergence Center, Incheon,22212, Korea, Republic of
[2] Inha University, Department of Materials Science and Engineering, Incheon,22212, Korea, Republic of
[3] Inha University, Program in Semiconductor Convergence, Incheon,22212, Korea, Republic of
来源：
IEEE Transactions on Electron Devices | 2024年 / 71卷 / 11期
关键词：
D O I：
10.1109/TED.2024.3447614
中图分类号：
学科分类号：
摘要：
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页码：6647 / 6651
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