Development and test of double-sided silicon strip detector

被引：0

作者：

Sun, Li-Jie ^{[1
]}

Lin, Cheng-Jian ^{[1
]}

Yang, Feng ^{[1
]}

Guo, Zhao-Qiao ^{[2
]}

Guo, Tian-Shu ^{[2
]}

Xu, Xin-Xing ^{[1
]}

Bao, Peng-Fei ^{[1
]}

Yang, Lei ^{[1
]}

Jia, Hui-Ming ^{[1
]}

Ma, Nan-Ru ^{[1
]}

Zhang, Huan-Qiao ^{[1
]}

Liu, Zu-Hua ^{[1
]}

Xia, Qing-Liang ^{[1
]}

机构：

[1] Department of Nuclear Physics, China Institute of Atomic Energy, Beijing,102413, China

[2] Beijing Kelixing Photoelectric Technology Co., Ltd., Beijing,102413, China

来源：

Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | 2015年 / 49卷 / 02期

关键词：

549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 713 Electronic Circuits;

D O I：

10.7538/yzk.2015.49.02.0336

中图分类号：

学科分类号：

摘要：

引用

页码：336 / 342

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