Effect of Pb content on microstructure and ferroelectric property of PZT thin film

被引:0
|
作者
Zhao, Suling [1 ,2 ]
Guan, Jianguo [1 ]
Zhang, Lianmeng [1 ]
Wang, Longhai [3 ]
机构
[1] State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
[2] Center for Material Research and Testing, Wuhan University of Technology, Wuhan 430070, China
[3] Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430073, China
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:703 / 707
相关论文
共 50 条
  • [1] FERROELECTRIC THIN FILM MICROSTRUCTURE DEVELOPMENT AND RELATED PROPERTY ENHANCEMENT
    Tuttle, Bruce
    Voigt, J. A.
    Headley, T. J.
    Potter, B. G.
    Dimos, D.
    Schwartz, R. W.
    Dugger, M. T.
    Michael, J.
    Nasby, R. D.
    Garino, T. J.
    Goodnow, D. C.
    FERROELECTRICS, 1994, 151 (01) : 11 - 20
  • [2] Effect of Pb excess content on microstructure and electrical properties of sol gel derived PZT thin films
    Wang, ZJ
    Maeda, R
    Kikuchi, K
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 229 - 234
  • [3] Microstructure investigations and structure-property correlations in ferroelectric thin film capacitors
    Li, H
    Yang, B
    Dhote, A
    Aggarwal, S
    Salamanca-Riba, L
    Ramesh, R
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 171 - 176
  • [4] The effect of PZT content to the property of PZT/PVDF composites
    Cai, Guang-Qiang
    Luo, Wen-Bo
    Wu, Chuan-Gui
    Chen, Chong
    Qian, Dong-Pei
    Gongneng Cailiao/Journal of Functional Materials, 2012, 43 (13): : 1786 - 1788
  • [5] Texture, structure and domain microstructure of ferroelectric PZT thin films
    Hector, J
    Floquet, N
    Niepce, C
    Gaucher, P
    Ganne, JP
    MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 285 - 288
  • [6] Effect of substrate and pre-sintering process on the microstructure of PZT thin film
    Hao, JJ
    Xu, TX
    Li, LT
    RARE METAL MATERIALS AND ENGINEERING, 2003, 32 : 229 - 232
  • [7] Aging effect on the ferroelectric property of YMnO3 thin film
    Guo, HY
    Wilson, IH
    Xu, JB
    Luo, EZ
    Cheung, WY
    Ke, N
    Sundaral, B
    FERROELECTRICS, 2001, 259 (1-4) : 181 - 185
  • [8] Effect of residual stress on ferroelectric properties of PZT thin film prepared by metalorganic decomposition
    Yang, ZY
    Zhou, YC
    Zheng, XJ
    MECHANICS AND MATERIAL ENGINEERING FOR SCIENCE AND EXPERIMENTS, 2001, : 259 - 262
  • [9] Polarization reversal property of ferroelectric thin film for ferroelectric memories
    Masuda, Y
    Echizen, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 817 - 821
  • [10] Polarization reversal property of ferroelectric thin film for ferroelectric memories
    Masuda, Yoichiro
    Echizen, Masahiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1600, 45 (2 A): : 817 - 821