Sputter-deposited thin gate SiO2 films for high quality polycrystalline silicon thin film transistors

被引：0
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作者：
Serikawa, Tadashi [1 ]
Miyashita, Makoto [2 ]
Uraoka, Yukiharu [2 ]
Fuyuki, Takashi [2 ]
机构：
[1] University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
[2] Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 5 B期
关键词：
Thin film transistors;
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摘要：
Journal article (JA)
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页码：4358 / 4361
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