1.8 v 24 × 10-6/°C CMOS bandgap voltage reference with wide operation temperature range

被引:0
|
作者
School of Physics and Microelectronics, Shandong University, Jinan 250100, China [1 ]
不详 [2 ]
机构
来源
Dianzi Qijian | 2006年 / 3卷 / 697-700期
关键词
8;
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [1] A 5V 10ppm/°C CMOS Bandgap Voltage Reference with Wide Operation Temperature Range
    Hou, Bin
    Jin, Xiangliang
    SIXTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATIONS, 2020, 11455
  • [2] Design of 5 × 10-6/°C bandgap voltage reference
    Hu, Xue-Zhong
    Jia, Xin-Zhang
    Xiao, Ben
    Dianzi Qijian/Journal of Electron Devices, 2006, 29 (03): : 766 - 769
  • [3] CMOS bandgap voltage reference with 1.8-V power supply
    Yang, L
    Shi, YF
    Li, L
    Zheng, ZY
    2003 5TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2003, : 611 - 614
  • [4] Curvature-compensated CMOS bandgap reference with 1.8-V operation
    Wang Xichuan
    Si Cuiying
    Xu Xing
    2006 CONFERENCE ON HIGH DENSITY MICROSYSTEM DESIGN AND PACKAGING AND COMPONENT FAILURE ANALYSIS (HDP '06), PROCEEDINGS, 2006, : 293 - +
  • [5] A 1.8V 0.918 ppm/°C CMOS bandgap voltage reference with curvature-compensated
    Pan, Gao
    Hua, Qing
    Zhang, Bo
    IEICE ELECTRONICS EXPRESS, 2019, 16 (23)
  • [6] A Wide Temperature Range Voltage Bandgap Reference Generator in 32nm CMOS Technology
    Singh, Anjani Kumar
    Pal, Pratosh Kumar
    Pattanaik, Manisha
    2015 GLOBAL CONFERENCE ON COMMUNICATION TECHNOLOGIES (GCCT), 2015, : 688 - 691
  • [7] A Linearized VBE Bandgap Voltage Reference with Wide Temperature Range
    Chen Xiaofei
    Liu Fanhong
    Zou Xuecheng
    Lin Shuangxi
    2013 IEEE 10TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2013,
  • [8] 1.8 V CMOS bandgap voltage reference with high power supply rejection ratio
    Beijing Embedded System Key Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
    Beijing Gongye Daxue Xuebao J. Beijing Univ. Technol., 2007, 10 (1052-1055):
  • [9] A Novel Wide-Temperature-Range, 3.9 ppm/°C CMOS Bandgap Reference Circuit
    Andreou, Charalambos M.
    Koudounas, Savvas
    Georgiou, Julius
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (02) : 574 - 581
  • [10] An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference
    Krolak, David
    Horsky, Pavel
    IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2024, 66 (03) : 801 - 808