Synthesis of GaN nanotubes through nitriding ZnO/Ga2O3 film

ZnO middle layers were sputtered on Si (111) substrates using radio frequency (r.f.) sputtering system, then Ga2O3 films were sputtered on them. ZnO/Ga2O3 films were nitrided in tube furnace under flowing NH3 ambience. ZnO volatilized in NH3 ambience at high temperature, at the same time Ga2O3 reacted with NH3 and synthesized GaN nanotubes. The measurement result of X-ray diffraction (XRD) revealed that the as-prepared GaN crystal were grown in c axis orientation with hexagonal wurtzite structure. Fourier transform infrared spectrophotometer (FTIR) was used to measure FTIR spectrum of the samples. The morphology and the structure of GaN nanotubes were studied by transmission electron microscope (TEM) and the selected area electron diffraction (SAED).