A vertically staged 2D van der Waals SnS2/SiS2 heterostructures for photovoltaic and photocatalytic application

被引:0
|
作者
Sivasamy, Ramesh [1 ]
Kaliyamoorthy, Selvam [2 ]
Amirthaganesan, S. [3 ]
Kalyan, Geetha [4 ]
Mosquera-Vargas, Edgar [5 ,6 ]
机构
[1] AGH Univ Krakow, Acad Ctr Mat & Nanotechnol, Al Mickiewicza 30, PL-30059 Krakow, Poland
[2] Mie Univ, Dept Chem, Tsu, Mie 5148507, Japan
[3] Saveetha Inst Medical&Techn Sci SIMATS, Saveetha Sch Engn, Dept Chem, Chennai 600077, Tamilnadu, India
[4] SRM Inst Sci & Technol, Dept Chem, Vadapalani 600026, Tamilnadu, India
[5] Univ Del Valle, Dept Fis, Grp Trans Fase & Mat Func, Santiago De Cali 6001, Colombia
[6] Univ Valle, Ctr Excelencia Nuevos Mat CENM, Santiago De Cali 76001, Colombia
关键词
Metal dichalcogenides; Two-dimensional nanosheet; Semiconductor; First-principle calculation; Optical properties; Photovoltaic application; HIGH-PRESSURES; NANOPARTICLES;
D O I
10.1016/j.mssp.2024.108845
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigates into the geometric, optical, and thermodynamic characteristics of the vertically staged 2D van der Waals SnS2/SiS2 heterostructure, examining its potential for photovoltaic and photocatalytic applications. A study of the band alignment reveals an indirect band-gap p-type semiconductor with a z-scheme configuration. The density of states highlights the significant influence of S-4p orbitals on the valence band near the Fermi level, while Sn/Si-3p orbitals contribute to the conduction band minimum. Furthermore, the SnS2/SiS2 heterostructure can control interlayer charge transport, impacting the band gap. Notably, the lower work function of the SnS2 layer facilitates the spontaneous migration of electrons from SnS2 to SiS2 within the heterostructure. These results, coupled with reduced work function and enhanced optical properties, emphasize the potential of this heterostructure as an efficient photocatalyst and photovoltaic material.
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页数:7
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