Modeling and calculating of interconnect delay by considering the influence of inductance effect and process fluctuations

被引：0
|
作者：
Yang Y. [1 ]
Chai C.-C. [1 ]
Dong G. [1 ]
Yang Y.-T. [1 ]
Leng P. [1 ]
机构：
[1] Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ.
来源：
Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2010年 / 37卷 / 03期
关键词：
Inductance; Interconnect delay; Process fluctuations; Statistical model;
D O I：
10.3969/j.issn.1001-2400.2010.03.023
中图分类号：
学科分类号：
摘要：
A statistical interconnect delay model considering the influence of inductance effect and process fluctuations is presented according to the improved equivalent Elmore delay, and the expressions for mean and standard deviation of interconnect delay are obtained. Calculated results indicate that the errors of the mean and standard deviation are less than 1.27% and 5.23% respectively in comparison with the results calculated by the widely used Monte Carlo method, and at the same time, the time elapsed for computing by using the proposed method is less than one ten-thousandth of that for 1000 computations by using the Monte Carlo method.
引用
收藏
页码：513 / 519
页数：6
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