Effect of substrate temperature on the optical and electronic properties of ZnO film prepared by PLD

ZnO thin films were prepared on c-plane sapphire substrates by pulsed laser deposition (PLD) , and their optical and electronic properties were characterized using the measurements of XRD, RHEED, PL spectra and Hall effect. The results of RHEED and XRD indicate that the crystal quality of the ZnO thin film escalated with the increase of substrate temperature from 350°C to 550°C. When the substrate temperature further increased, the crystal quality of the thin film deteriorated. Among the four samples, the one prepared at 550°C exhibited the clearest regular spotty RHEED image and the narrowest FWHM of (0002) peak. The results of PL spectra and Hall measurement indicate that samples prepared at 550X exhibit good optical property and the highest Hall mobility.