Ultra-Fast Waveguide MUTC Photodiodes Over 220 GHz

We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed discussion on the design of the cliff layer and waveguide layer. Addressing the parasitic capacitance challenge, we introduce benzocyclobutene (BCB) beneath the PD electrodes, effectively overcoming the bandwidth bottleneck associated with the RC time constant. Devices with sizes of 2 &#x00D7; 7 <inline-formula><tex-math notation="LaTeX">$upmu$</tex-math></inline-formula>m <inline-formula><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> and 2&#x00D7; 10 <inline-formula><tex-math notation="LaTeX">$upmu$</tex-math></inline-formula> m<inline-formula><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> achieve 3-dB bandwidths over 220&#x00A0;GHz, along with external responsivities of 0.161&#x00A0;A/W and 0.237&#x00A0;A/W, respectively. Notably, the RF output power reaches a peak of -1.69&#x00A0;dBm at 215&#x00A0;GHz for 2 &#x00D7; 15 <inline-formula><tex-math notation="LaTeX">$upmu$</tex-math></inline-formula>m<inline-formula><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> PDs. IEEE