AN ISOLATED GATE DRIVER POWER SUPPLY DESIGN FOR HIGH-VOLTAGE SiC MOSFET WITH LOW COUPLING CAPACITANCE

被引：0
|
作者：
Huang, Zhangjian [1 ]
Wang, Tao [1 ]
Li, Xiang [1 ]
Zhang, Maoqiang [1 ]
Luo, Rensong [1 ]
Yu, Xiaoyang [1 ]
机构：
[1] Nanjing NR Electric Co., Ltd., Nanjing,211102, China
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2024年 / 45卷 / 09期
关键词：
1009.2 - 482.1 Mineralogical Techniques - 701.1 Electricity: Basic Concepts and Phenomena - 704.2 Electric Equipment - 714.2 Semiconductor Devices and Integrated Circuits;
D O I：
10.19912/j.0254-0096.tynxb.2023-0691
中图分类号：
学科分类号：
摘要：
23
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收藏
页码：112 / 121
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