Investigation of filling factor in In0.53Ga0.47As/In0.52 Al0.48As quantum wells with two occupied subbands

被引：0
|
作者：
Shang, Li-Yan
Lin, Tie
Zhou, Wen-Zheng
Guo, Shao-Ling
Li, Dong-Lin
Gao, Hong-Ling
Cui, Li-Jie
Zeng, Yi-Ping
Chu, Jun-Hao
机构：
[1] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
[2] Physicals Science and Technology College, Guangxi University, Nanning 530004, China
[3] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[4] ECNU-SITP Joint Laboratory for Imaging Information, East China Normal University, Shanghai 200062, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2008年 / 57卷 / 06期
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页码：3818 / 3822
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