Research on the formation mechanism of crystal group in fabricating Poly-Si thin film

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作者：
机构：
[1] [1,2,Jin, Rui-Min
[2] Cai, Zhi-Duan
[3] Cang, Li-Min
[4] Yan, Tao
[5] Xu, Jian-Jun
[6] Li, Shu-Zeng
来源：
Jin, R.-M. (jinruimin2004@163.com) | 2013年 / Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China卷 / 42期
关键词：
Amorphous silicon - Metallic films - Polycrystalline materials - X ray diffraction - Rapid thermal annealing - Thin films;
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摘要：
Undoped amorphous silicon film deposited by PECVD on quartz glass, and annealed by rapid thermal annealing (RTA) and furnace annealing (FA) respectively, the films were characterized by Raman spectra, X-ray diffraction (XRD) and scanning electronic microscope (SEM) respectively. It could be found phenomenon of crystal group in fabricating poly-Si thin film. The formation mechanism of the phenomenon has been studied.
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