Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source

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作者：
Funato, Mitsuru [1 ]
Ujita, Shinji [1 ]
Kawakami, Yoichi [1 ]
机构：
[1] Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 10 A期
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Journal article (JA)
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页码：6767 / 6772
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