Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing

被引：0
|
作者：
Georgiadou, D.G. [1 ]
Ulmeanu, M. [2 ,3 ]
Kompitsas, M. [4 ]
Argitis, P. [1 ]
Kandyla, M. [4 ]
机构：
[1] National Center for Scientific Research 'Demokritos', Institute of Microelectronics, Athens,15310, Greece
[2] National Institute for Laser, Plasma and Radiation Physics, Laser Department, Atomistilor 409, PO Box MG-36, Magurele,077125, Romania
[3] University of Bristol, School of Chemistry, Bristol,BS8 1TS, United Kingdom
[4] National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Constantinou Avenue, Athens,11635, Greece
来源：
Materials Research Express | 2015年 / 1卷 / 04期
关键词：
Electric characteristics - Fabrication method - Femtosecond laser processing - Large surface area - Large-scale fabrication - Orders of magnitude - Rectification ratio - Silicon substrates;
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