Microstructural characterization in reliability measurement of phase change random access memory

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作者：
Process Development Team, Samsung Electronics Co., Ltd., Hwaseong, Gyeonggi 445-701, Korea, Republic of [1 ]
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不详 [3 ]
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Jpn. J. Appl. Phys. | / 4 PART 2卷
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摘要：
High resolution transmission electron microscopy
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