High Temperature Tribological Properties of Hydrogen-Free Si-DLC Films Using HiPIMS/DCMS Co-Deposition Technique

被引：0
|
作者：
Li H. [1 ,2 ,3 ]
Su F. [1 ]
Chen Y. [1 ,2 ,3 ]
Lin S. [2 ,3 ]
Li Z. [4 ]
机构：
[1] School of Mechanical and Automotive Engineering, South China University of Technology, Guangdong, Guangzhou
[2] National Engineering Laboratory of Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangdong, Guangzhou
[3] Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, Guangdong, Guangzhou
[4] School of Mechanical and Electrical Engineering, Guangzhou Railway Polytechnic, Guangdong, Guangzhou
来源：
Mocaxue Xuebao/Tribology | 2023年 / 43卷 / 04期
基金：
中国国家自然科学基金;
关键词：
friction mechanism; high temperature; high-power impulse magnetron sputtering; Si-DLC film; tribological properties;
D O I：
10.16078/j.tribology.2022182
中图分类号：
学科分类号：
摘要：
Silicon doped hydrogen-free diamond-like carbon (Si-DLC) films were prepared using a superimposed high-power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) deposition system with anode layer ion source assistance. The composition, microstructure, and tribological properties of Si-DLC films doped with different Si content at elevated temperature (25~500 ℃) were systematically investigated. Raman and XPS were used to analyze the influence of Si doping amount on microstructure, chemical composition and tribological properties of the films before and after high temperature friction. The results showed that Si-DLC film displayed a typical amorphous structure. The proportion of sp3-C/sp2-C in the films gradually increased with the increase of Si dopant. Si atoms in Si-DLC films mainly combined with C and O atoms to form C-Si-C and C-Si-O bonds. The formation of Si-C bonds contributed to the reduction of the internal stress and the improvement of the film-substrate adhesion. At room temperature, Si-DLC coating had a low friction coefficient due to the formation of transfer film. At high temperature, the formation of Si-C bonds was propitious to improve the high temperature stability of Si-DLC film. In addition, the partial oxidation of Si-C bonds to Si-O-C bonds in the friction region enables the film to had both low friction and low wear at high temperature. © 2023 Science Press. All rights reserved.
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页码：385 / 396
页数：11
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