Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells

被引：0
|
作者：
Wang Q. [1 ,2 ]
Wang H. [1 ,2 ]
Wang J. [1 ,2 ]
Ma X. [1 ,2 ]
机构：
[1] State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun
[2] Research Institute of Chongqing, Changchun University of Science and Technology, Chongqing
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2023年 / 44卷 / 04期
关键词：
high strain; InGaAs/GaAs MQWs; localized states; metal-organic chemical vapor deposition（MOCVD）;
D O I：
10.37188/CJL.20220375
中图分类号：
学科分类号：
摘要：
In order to study the localized states in high-strain InGaAs/GaAs multiple quantum wells（MQWs），a five-period In0.3Ga0.7As/GaAs MQWs structure was designed and grown by metal-organic chemical vapor deposition （MOCVD）technique in this paper. By means of AFM and temperature-dependent PL，the material disorders in MQWs such as defects and component fluctuation were found，and the existence and origin of localized states in MQWs were verified. The influence of the localized states on the spectra at low temperature was different for different measurement positions，exhibiting a bimodal distribution and an“S”-shaped change in peak position，respectively. This further indicated that different disorder within the material led to different depths of localized states. Based on the fitting of the temperature-bandgap relationship，the potential distribution of the MQWs structure containing localized states was proposed，and the recombination mechanism of the localized state carriers and free carriers was revealed. The optical properties of localized states at different depths under different excitation power densities were studied with the help of excitation power-dependent PL measurement. © 2023 Chines Academy of Sciences. All rights reserved.
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页码：627 / 633
页数：6
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