Depth profiling of Fe-implanted Si(100) by means of X-ray reflectivity and extremely asymmetric X-ray diffraction

被引:0
|
作者
机构
[1] Khanbabaee, B.
[2] Biermanns, A.
[3] Facsko, S.
[4] Grenzer, J.
[5] Pietsch, U.
来源
Khanbabaee, B. (khanbabaee@physik.uni-siegen.de) | 1600年 / International Union of Crystallography, 5 Abbey Road, Chester, CH1 2HU, United Kingdom卷 / 46期
关键词
24;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Depth profiling of Fe-implanted Si(100) by means of X-ray reflectivity and extremely asymmetric X-ray diffraction
    Khanbabaee, B.
    Biermanns, A.
    Facsko, S.
    Grenzer, J.
    Pietsch, U.
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2013, 46 : 505 - 511
  • [2] Depth-dependent x-ray diffraction using extremely asymmetric reflections
    Ress, HR
    Faschinger, W
    Landwehr, G
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (22) : 3272 - 3278
  • [3] Near-surface density profiling of Fe ion irradiated Si (100) using extremely asymmetric x-ray diffraction by variation of the wavelength
    Khanbabaee, B.
    Facsko, S.
    Doyle, S.
    Pietsch, U.
    APPLIED PHYSICS LETTERS, 2014, 105 (16)
  • [4] X-ray metrology by diffraction and reflectivity
    Bowen, DK
    Deslattes, RD
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2000, INTERNATIONAL CONFERENCE, 2001, 550 : 570 - 579
  • [5] X-ray diffraction and X-ray reflectivity applied to investigation of thin films
    Rafaja, D
    ADVANCES IN SOLID STATE PHYSICS 41, 2001, 41 : 275 - 286
  • [6] Fe-implanted SiC as a potential DMS: X-ray diffraction and rutherford backscattering and channelling study
    Dupeyrat, C.
    Declemy, A.
    Drouet, M.
    Debelle, A.
    Thome, L.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 2863 - 2865
  • [7] Functional Group Depth Profiling with Resonant Soft X-ray Reflectivity
    Sunday, Daniel
    Chan, Edwin
    Stafford, Christopher
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 249
  • [8] SiO2/Si(100) Interfacial Lattice Strain Studied by Extremely Asymmetric X-ray Diffraction
    Yoshida, Hironori
    Akimoto, Koichi
    Ito, Yuki
    Emoto, Takashi
    Yamamoto, Naoya
    Oshita, Yoshio
    Ogura, Atsushi
    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 33, NO 3, 2008, 33 (03): : 603 - 605
  • [9] New methods for depth profiling of heterostructures by X-ray diffraction
    Moller, MO
    Gerhard, T
    Ress, HR
    Landwehr, G
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (2-4): : 321 - 328
  • [10] Depth profiling of GaN by High Resolution X-ray diffraction
    Romanitan, C.
    2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 2019, : 173 - 176