Optical properties of aluminum-, gallium-, and indium-doped Bi 4Ti3O12 thin films

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作者：
Jia, Caihong [1 ,2 ]
Chen, Yonghai [2 ]
Zhang, W.F. [1 ]
机构：
[1] Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
[2] Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
来源：
Journal of Applied Physics | 2009年 / 105卷 / 11期
关键词：
Undoped and Al-; Ga-; and In-doped Bi4Ti3O 12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer; respectively. The optical band-gap energies; Urbach energies; and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model; the dispersion parameters such as the average oscillator energy (E0) and dispersion energy (Ed) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al; Ga; and In; which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E0/S0) increases and the chemical bonding quantity (Β) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. © 2009 American Institute of Physics;
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