Nd:GdVO4/Cr: YAG microchip pulse laser

被引：0

作者：

Liao M. ^{[1
]}

Wang Z. ^{[1
]}

Yu H. ^{[1
]}

Zhang H. ^{[1
]}

Chen L. ^{[1
]}

Zhuang S. ^{[1
]}

Guo L. ^{[1
]}

Zhao Y. ^{[1
]}

Wang J. ^{[1
]}

Xu X. ^{[1
]}

机构：

[1] State Key Laboratory of Crystal Materials, Shandong University, Jinan

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2010年 / 37卷 / 12期

关键词：

Cr:YAG crystal; Lasers; Microchip; Nd:GdVO[!sub]4[!/sub] crystal; Passively Q-switched;

D O I：

10.3788/CJL20103712.2954

中图分类号：

学科分类号：

摘要：

With Cr:YAG as the saturable absorber, passively Q-switched microchip laser is obtained by laser diode (LD) end-pumped Nd:GdVO4 crystal. The Nd:GdVO4 crystal is a-cut with the size of 3 mm×3 mm×1 mm, and the atom fraction of Nd3+ ions is 0.5%. The pump end face of Nd:GdVO4 crystal is anti-reflective coated for 808 nm and high-reflective coated for 1.06 μm, which serves as the input mirror of laser cavity. The size of Cr4+:YAG is φ9.5 mm×1.1 mm, the initial transmission is 77%, and its outer end face is partially reflective coated for 1.06 μm (T=15%), which serves as the output mirror of laser cavity. The total length of laser cavity is 5~6 mm. The pump threshold of the laser is 4.62 W. When the pump power reaches 13.86 W, a maximum average output power of 0.98 W is obtained, corresponding to optical conversion efficiency of 7%, and slope efficiency of 9.5%. The highest repetition rate, largest pulse energy and shortest pulse width are measured to be 23.4 kHz, 44.6 μJ, and 2.9 ns respectively, corresponding to peak power of 15.4 kW.

引用

页码：2954 / 2957

页数：3

共 18 条

[1] Zayhowski J.J., Mooradian A., Single-frequency microchip Nd lasers, Opt. Lett., 4, 1, pp. 24-26, (1989)
[2] Zayhowski J.J., Microchip lasers, Opt. Mat., 11, 2-3, pp. 255-267, (1999)
[3] Sulc J., Jelinkova H., Nejezchleb K., Et al., Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm, Opt. Mat., 30, 1, pp. 50-53, (2007)
[4] Zayhowski J.J., Passively Q-switched Nd:YAG microchip lasers and applications, J. Alloys and Compounds, 303-304, pp. 393-400, (2000)
[5] Forget S., Druon F., Balembois F., Et al., Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser, Opt. Commun., 259, 2, pp. 816-819, (2006)
[6] Xu F., Ma L., Wang Z., Et al., Laser diode-pumped Nd:GdVO4 microchip laser, Chinese J. Lasers, 32, 9, pp. 1166-1168, (2005)
[7] Xu F., Wang Z., Zhang H., Et al., Study on the properties of LD-pumped Nd:LuVO4 microchip laser, Acta Physica Sinica, 56, 7, pp. 3950-3954, (2007)
[8] Hu M., Chen J., Ge J., Et al., Temporal characteristics of the gain-switched microchip laser, Chinese J. Lasers, 34, 4, pp. 475-480, (2007)
[9] Yao B., Wang Q., Wang Y., Et al., Experimental study of (Tm, Ho):YLF microchip laser, Acta Optica Sinica, 22, 10, pp. 1216-1218, (2002)
[10] Ma L., Hu H., Li Z., Et al., Nd:YVO4 microchip laser with a Plano/Plano cavity end-pumped by LD, Chinese J. Lasers, A27, 6, pp. 485-487, (2000)

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