First-principles calculations of uniaxial strain effects on manganese in silicon

被引：0
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作者：
Yabuuchi, Shin [1 ]
Ohta, Eiji [1 ]
Kageshima, Hiroyuki [2 ]
机构：
[1] Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
[2] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 01期
关键词：
Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese. ©2008 The Japan Society of Applied Physics;
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页码：26 / 30
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