Study of AlGalnP/Si wafer bonding

被引：0
|
作者：
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2007年 / SUPPL.卷 / 558-560期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] A study of Si wafer bonding via methanol capillarity
    Jerez-Hanckes, CF
    Qiao, D
    Lau, SS
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (03) : 751 - 754
  • [2] Amorphous Si/Au wafer bonding
    Chen, P. H.
    Lin, C. L.
    Liu, C. Y.
    APPLIED PHYSICS LETTERS, 2007, 90 (13)
  • [3] Si/InP direct wafer bonding: A first-principles study
    Duan, Xueyi
    Kang, Ruyan
    Liu, Zehan
    Zuo, Zhiyuan
    Zhao, Jia
    COMPUTATIONAL MATERIALS SCIENCE, 2024, 241
  • [4] Si wafer bonding with Ta silicide formation
    Fukuroda, Atsushi, 1693, (30):
  • [5] SI WAFER BONDING WITH TA SILICIDE FORMATION
    FUKURODA, A
    SUGII, T
    ARIMOTO, Y
    ITO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1693 - L1695
  • [6] Ge/Si heterojunction photodoides by wafer bonding
    Kanbe, Hiroshi
    2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2006, : 863 - +
  • [7] Low temperature InP/Si wafer bonding
    Tong, QY
    Gan, Q
    Hudson, G
    Fountain, G
    Enquist, P
    APPLIED PHYSICS LETTERS, 2004, 84 (05) : 732 - 734
  • [8] Miniaturization of Si diaphragms obtained by wafer bonding
    Goustouridis, D
    Normand, P
    Tsoukalas, D
    MICROELECTRONIC ENGINEERING, 1998, 42 : 437 - 440
  • [9] Room temperature Si/Si wafer direct bonding in air
    Wang, Chenxi
    Higurashi, Eiji
    Suga, Tadatomo
    ICEPT: 2007 8TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS, 2007, : 552 - +
  • [10] Si-to-Si wafer bonding using evaporated glass
    deReus, R
    Lindahl, M
    TRANSDUCERS 97 - 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 1997, : 661 - 664
12345