Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

被引：0

作者：

Hirayama, Kana ^{[1
]}

Ueno, Ryuji ^{[1
]}

Iwamura, Yoshiaki ^{[1
]}

Yoshino, Keisuke ^{[1
]}

Wang, Dong ^{[2
]}

Yang, Haigui ^{[2
]}

Nakashima, Hiroshi ^{[2
]}

机构：

[1] Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

[2] Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

来源：

Japanese Journal of Applied Physics | 2011年 / 50卷 / 4 PART 2期

关键词：

D O I：

04DA10

中图分类号：

学科分类号：

摘要：

Charge coupled devices - Fabrication - MOS capacitors - Deposition - Oxide semiconductors - Transistors - Interface states - Passivation - Aluminum - Annealing

引用

共 50 条

[1] Fabrication of Ge Metal-Oxide-Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
Hirayama, Kana
Ueno, Ryuji
Iwamura, Yoshiaki
Yoshino, Keisuke
Wang, Dong
Yang, Haigui
Nakashima, Hiroshi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[2] Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation
Nakashima, Hiroshi
Iwamura, Yoshiaki
Sakamoto, Keita
Wang, Dong
Hirayama, Kana
Yamamoto, Keisuke
Yang, Haigui
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (25)
[3] High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation
Yamamoto, Keisuke
Ueno, Ryuji
Yamanaka, Takeshi
Hirayama, Kana
Yang, Haigui
Wang, Dong
Nakashima, Hiroshi
[J]. APPLIED PHYSICS EXPRESS, 2011, 4 (05)
[4] Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer
Liu Guan-Zhou
Li Cheng
Lu Chang-Bao
Tang Rui-Fan
Tang Meng-Rao
Wu Zheng
Yang Xu
Huang Wei
Lai Hong-Kai
Chen Song-Yan
[J]. CHINESE PHYSICS B, 2012, 21 (11)
[5] Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer
刘冠洲
李成
路长宝
唐锐钒
汤梦饶
吴政
杨旭
黄巍
赖虹凯
陈松岩
[J]. Chinese Physics B, 2012, (11) : 469 - 475
[6] An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
Wang, Dong
Kojima, Shuta
Sakamoto, Keita
Yamamoto, Keisuke
Nakashima, Hiroshi
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
[7] The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors
Xue Bai-Qing
Chang Hu-Dong
Sun Bing
Wang Sheng-Kai
Liu Hong-Gang
[J]. CHINESE PHYSICS LETTERS, 2012, 29 (04)
[8] Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
Hiroshige, Yasuo
Higashi, Seiichiro
Matsumoto, Kazuya
Miyazaki, Seiichi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
[9] Thermal gate SiO2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
Wu, Yung-Hsien
Wu, Jia-Rong
Wu, Min-Lin
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (09)
[10] Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors
Ong, B. S.
Pey, K. L.
Ong, C. Y.
Tan, C. S.
Gan, C. L.
Cai, H.
Antoniadis, D. A.
Fitzgerald, E. A.
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (09) : II328 - II331

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