Low density of threading dislocations in AlN grown on sapphire

被引：0
|
作者：
Faleev, Nikolai [1 ]
Lu, Hai [2 ]
Schaff, William J. [2 ]
机构：
[1] Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716, United States
[2] Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, United States
来源：
Journal of Applied Physics | 2007年 / 101卷 / 09期
关键词：
Dislocations; (crystals);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Conference article (CA)
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