Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions

被引：0

作者：

Bae, Seongtae ^{[1
]}

Tan, S.G. ^{[2
]}

Jalil, M.B.A. ^{[1
]}

Kumar, S. Bala ^{[1
]}

Teo, K.L. ^{[1
]}

Leong, Z.Y. ^{[2
]}

Liew, Thomas ^{[2
]}

机构：

[1] ISML, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore

[2] Data Storage Institute, Singapore 117608, Singapore

来源：

Journal of Applied Physics | 2006年 / 99卷 / 08期

关键词：

We investigated the effect of half-metal (HM) conductivity on the magnetoresistance (MR) of the pseudo spin-valve (PSV) structure. We derived a PSV MR model based on the spin transport theory of van Son [Phys. Rev. Lett. 58; 2271 (1987)] and Rashba [Eur. Phys. J. B 29; 513 (2002)] to show that for HM intrinsic polarization (α) below a critical value; the PSV MR shows an anomalous behavior of decreasing with increasing HM resistivity. We attributed this to the competition between the HM and the ferromagnetic (FM) layers in contributing to the overall device MR; and derived the expression for critical α. © 2006 American Institute of Physics;

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[1] Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions
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