Investigation on heat and mass transfer in ammonothermal growths of single GaN crystals

被引:0
|
作者
National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, 15 Beisihuanxi Road, Beijing 100190, China [1 ]
机构
来源
Kung Cheng Je Wu Li Hsueh Pao | 2009年 / 9卷 / 1552-1554期
关键词
Flow fields;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Numerical simulation in ammonothermal growth of single crystals of GaN
    Jiang, Yan-Ni
    Chen, Qi-Sheng
    Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics, 2010, 31 (08): : 1392 - 1394
  • [2] Modeling ammonothermal growth of GaN single crystals: The role of transport
    Pendurti, S.
    Chen, Q-S.
    Prasad, V.
    JOURNAL OF CRYSTAL GROWTH, 2006, 296 (02) : 150 - 158
  • [3] Cathodoluminescence Study of Ammonothermal GaN Crystals
    Hortelano, V.
    Martinez, O.
    Jimenez, J.
    Wang, B.
    Swider, S.
    Suscavage, M.
    Bliss, D.
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 63 - +
  • [4] Growth and characterization of bulk GaN single crystals by basic ammonothermal method
    Shim, Jang Bo
    Lee, Young Kuk
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2016, 26 (02): : 58 - 61
  • [5] HVPE-GaN growth on ammonothermal GaN crystals
    Sochacki, Tomasz
    Amilusik, Mikolaj
    Lucznik, Boleslaw
    Bockowski, Michal
    Weyher, Janusz L.
    Nowak, Grzegorz
    Sadovyi, Bogdan
    Kamler, Grzegorz
    Grzegory, Izabella
    Kucharski, Robert
    Zajac, Marcin
    Doradzinski, Robert
    Dwilinski, Robert
    GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
  • [6] Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates
    Kucharski, R.
    Zajac, M.
    Puchalski, A.
    Sochacki, T.
    Bockowski, M.
    Weyher, J. L.
    Iwinska, M.
    Serafinczuk, J.
    Kudrawiec, R.
    Siemiatkowski, Z.
    JOURNAL OF CRYSTAL GROWTH, 2015, 427 : 1 - 6
  • [7] Heat, mass, and crystal growth of GaN in the ammonothermal process: A numerical study
    Mirzaee, Iman
    Charmchi, Majid
    Sun, Hongwei
    NUMERICAL HEAT TRANSFER PART A-APPLICATIONS, 2016, 70 (05) : 460 - 491
  • [8] Ammonothermal growth of GaN crystals in alkaline solutions
    Wang, BG
    Callahan, MJ
    Rakes, KD
    Bouthillette, LO
    Wang, SQ
    Bliss, DF
    Kolis, JW
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 376 - 380
  • [9] Vacancy defects in bulk ammonothermal GaN crystals
    Tuomisto, F.
    Maki, J. -M.
    Zajac, M.
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (18) : 2620 - 2623
  • [10] Growth of GaN crystals under ammonothermal conditions
    Callahan, MJ
    Wang, BG
    Bouthillette, LO
    Wang, SQ
    Kolis, JW
    Bliss, DF
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 263 - 268