Kinetic Monte Carlo simulation of GaN epitaxy

被引：0

作者：

Feng L. ^{[1
]}

Guo R. ^{[1
]}

Zhang J. ^{[2
]}

机构：

[1] School of Mechano-electronic Engineering, Xidian Univ., Xi'an

[2] School of Microelectronics, Xidian Univ., Xi'an

来源：

Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2016年 / 43卷 / 03期

关键词：

GaN; Kinetic Monte Carlo(KMC); Reaction kinetics; Reaction model;

D O I：

10.3969/j.issn.1001-2400.2016.03.029

中图分类号：

学科分类号：

摘要：

A chemical reaction mode about GaN epitaxy in MOCVD is presented. We simulate the growth process of GaN in the vertical-spray MOCVD system on this mode using the KMC mothod. The result shows that adductive reaction mostly occurs at a lower temperature and pyrolytic reaction mostly occurs at a high temperature. And the growth rate increases with increasing temperature. This feature determines the surface morphology of the material. We also include the diffusion and desorption process of the reaction particle by the KMC method. These processes depend mostly on temperature and ultimately affect the surface morphology of the GaN material. © 2016, The Editorial Board of Journal of Xidian University. All right reserved.

引用

页码：167 / 171

页数：4

共 9 条

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