Non-symmetric magnetic mirror field ECR oxygen plasma etching CVD diamond films

被引：3
|
作者：
Tan B. [1 ]
Ma Z. [1 ]
Shen W. [1 ]
Wu Z. [1 ]
机构：
[1] Key Laboratory of Plasma Chemical and Advanced Materials of Hubei Province, Wuhan Institute of Technology
来源：
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | 2010年 / 22卷 / 08期
关键词：
Chemical vapor deposition; Electron cyclotron resonance; Etching; Non-symmetric magnetic mirror field; Oxygen plasma;
D O I：
10.3788/HPLPB20102208.1887
中图分类号：
学科分类号：
摘要：
The ion parameters, electronic parameters and its spatial distribution were measured respectively by ion-sensitive probe and double Langmuir probe on a non-symmetric magnetic mirror field ECR plasma apparatus. The effects of gas pressure on plasma parameters and the spatial distribution were analyzed. The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied. The results showed that the electronic temperature was 5~10 eV, the ion temperature was about 1 eV and the electron density was in the order of 1010 cm-3. With the increasing of gas pressure, the electron density increased firstly and then decreased, the temperature of the electron and ion gradually decreased. The spatial distribution of plasma density was more uniform under low pressure. The best pressure for diamond etching was 0. 1 Pa. The characteristics of ion cyclotron motion were strengthened by the magnetic mirror field and was useful for the etching parallel to the surface of the diamond films, as a result, the grain boundaries and defects of diamond films were effectively protected.
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页码：1887 / 1890
页数：3
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