The pinch-off effect and inhomogeneous barrier height analysis in Al/p-GaAs Schottky barrier diodes

被引:0
|
作者
Soylu, M. [1 ]
Yakuphanoglu, F. [2 ]
Farooq, W.A. [3 ]
机构
[1] Department of Physics, Faculty of Sciences, Bingöl University, Turkey
[2] Department of Metallurgical and Materials Engineering, Firat University, 23119, Elaziǧ, Turkey
[3] Department of Physics, College of Science, King Saud University, Riyadh, Saudi Arabia
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:135 / 142
相关论文
共 50 条
  • [1] The pinch-off effect and inhomogeneous barrier height analysis in Al/p-GaAs Schottky barrier diodes
    Soylu, M.
    Yakuphanoglu, F.
    Farooq, W. A.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (1-2): : 135 - 142
  • [2] Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes
    Turut, Abdulmecit
    Efeoglu, Hasan
    JOURNAL OF ELECTRONIC MATERIALS, 2025, 54 (03) : 2460 - 2470
  • [3] Doping concentration dependence of pinch-off effect in inhomogeneous Schottky diodes.
    Chand, Subhash
    Kaushal, Priyanka
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 243 - 246
  • [4] Gaussian Distribution of Inhomogeneous Barrier Height of Al/ZnS/ITO Schottky Barrier Diodes
    Dey, Arka
    Jana, Rajkumar
    Dhar, Joydeep
    Das, Pubali
    Ray, Partha Pratim
    MATERIALS TODAY-PROCEEDINGS, 2018, 5 (03) : 9958 - 9964
  • [5] On the effective barrier height in inhomogeneous Schottky diodes
    Osvald, J.
    2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM), 2018, : 125 - 128
  • [6] The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range
    Zeyrek, S.
    Buelbuel, M. M.
    Altindal, S.
    Baykul, M. C.
    Yuezer, H.
    BRAZILIAN JOURNAL OF PHYSICS, 2008, 38 (04) : 591 - 597
  • [7] Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes
    Osvald, J
    ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 141 - 144
  • [8] ON THE BARRIER HEIGHT OF AL/P-SI SCHOTTKY DIODES
    IOANNOU, DE
    HUANG, YJ
    MCLARTY, PK
    JOHNSON, SM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K223 - K226
  • [9] BARRIER HEIGHT CHANGE IN GAAS SCHOTTKY DIODES INDUCED BY PIEZOELECTRIC EFFECT
    CHUNG, KW
    WANG, Z
    COSTA, JC
    WILLIAMSON, F
    RUDEN, PP
    NATHAN, MI
    APPLIED PHYSICS LETTERS, 1991, 59 (10) : 1191 - 1193
  • [10] Gaussian distribution of inhomogeneous barrier height in Al/ SiO 2/p-Si Schottky diodes
    Yildiz, D.E.
    Altindal, S.
    Kanbur, H.
    1600, American Institute of Physics Inc. (103):