Interfacial reactions of fine-pitch Cu/Sn-3.5Ag pillar joints on Cu/Zn and Cu/Ni under bump metallurgies

被引:0
|
作者
Kim, Mi-Song [1 ,3 ]
Kang, Myoung-Seok [1 ]
Bang, Jung-Hwan [1 ]
Lee, Chang-Woo [1 ,2 ]
Kim, Mok-Soon [3 ]
Yoo, Sehoon [1 ,2 ]
机构
[1] Advanced Welding and Joining RandBD Group, Korea Institute of Industrial Technology, 156, Gaetbeol-ro, Yeonsu-gu, Incheon,406-840, Korea, Republic of
[2] Department of Electronic Packaging Engineering, Korea University of Science and Technology, 217, Gajeong-ro, Yuseong-gu, Daejeon,305-350, Korea, Republic of
[3] Department of Materials Science and Engineering, Inha University, 100, Inha-ro, Nam-gu, Incheon,402-751, Korea, Republic of
关键词
Cu pillar - Cu under bump metallurgies - Flip chip bonding - Growth behavior - Interfacial intermetallics - Kirkendall void - Low growth rate - Under-bump metallurgies;
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摘要
The growth behaviors of various interfacial intermetallic compounds formed at fine-pitch Cu/Sn-Ag pillar bumps fabricated on Zn- and Ni-sputtered Cu under bump metallurgies (UBMs) were investigated in this study. After flip-chip bonding, a scallop-type layer of the intermetallic compound Cu6Sn5 was formed at the pillar joint on the Cu and Cu/Zn UBMs, while the joint on the Cu/Ni UBM exhibited a layer of the intermetallic compound (Cu, Ni)6Sn5. During thermal aging, Cu6Sn5 transformed into Cu3Sn, and Kirkendall voids were formed at the Cu/Cu3Sn interface. The thickness of the Cu3Sn layer in the Cu/Ni UBM was lower than those in the Cu and Cu/Zn samples. In addition, the Cu/Ni UBM had a lower void area ratio than did the Cu and Cu/Zn samples, owing to the low growth rate of Cu3Sn. The die shear strength of the Cu/Ni UBM was higher than those of Cu and Cu/Zn UBMs. Finally, with an increase in the aging time, the fracture site moved from the Cu6Sn5 region to the Cu/Cu3Sn interface for the Cu and Cu/Zn UBMs. However, in the case of the Cu/Ni UBM, fracturing occurred in the Cu6Sn5 or Cu3Sn region. © 2014 Elsevier Ltd. All rights reserved.
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页码:394 / 400
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