Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30nm NAND flash memory

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作者：
Department of Electrical and Electronic Engineering, Shinshu University, Nagano [1 ]
380-8553, Japan
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来源：
Jpn. J. Appl. Phys. | / 4卷
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Engineering Village;
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04DD02
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摘要：
Current concentration - Junction leakage currents - Monte Carlo device simulations - Random dopant fluctuation - Random telegraph noise - Shallow trench isolation - Statistical distribution - Vertical electrical fields
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