Electrical properties of low-dielectric-constant SiOC(-H) films prepared by plasma-enhanced chemical vapor deposition from methyltriethoxysilane and O 2

被引：0
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作者：
Navamathavan, Rangaswamy [1 ]
Oh, Kyoung Suk [1 ]
Chang, Sil Yang [1 ]
Kim, Seung Hyun [1 ]
Jang, Yong Jun [1 ]
Jung, An Su [1 ]
Lee, Heon Ju [2 ]
Lee, Kwang Man [3 ]
Choi, Chi Kyu [1 ]
机构：
[1] Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756, Korea, Republic of
[2] Department of Mechanical, Energy and Production Engineering, Cheju National University, Jeju 690-756, Korea, Republic of
[3] Faculty of Electrical and Electronics Engineering, Cheju National University, Jeju 690-756, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 10 B期
关键词：
SiOC(-H) films were deposited on a p-type Si(100) substrate by plasma-enhanced chemical vapor deposition (PECVD) from methyltriethoxysilane (MTES) and oxygen precursors. The MTES/O2 flow rate ratio was varied from 40 to 100% to investigate its effect on the properties of the films. Film thickness and refractive index were measured by field-emission scanning electron microscopy (FESEM) and ellipsometry; respectively. The chemical structures of the SiOC(-H) films were characterized by Fourier transform infrared spectroscopy (FTIR) in the absorbance mode. The bonding configurations of the SiOC(-H) films remained the unchanged upon annealing; showing their good thermal stability. The electrical properties of the films were measured using a metal-insulator-semiconductor (MIS) Al/SiOC(-H)/p-Si structure. The experimental lowest dielectric constant of the SiOC(-H) film was found to be 2.38 at an annealing temperature 500 ÆC and the film has excellent thermal stability up to 500 °C. The SiOC(-H) films deposited by MTES and O2 precursors are a promising material for next-generation Cu-interconnect technology. © 2006 The Japan Society of Applied Physics;
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页码：8435 / 8439
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