Simulation analysis and experimental research of high efficiency and low damage processing mechanism for SiC single crystal chip

SiC single crystal chip has been recognized as an ideal semiconductor material for various applications. However, owing to its high hardness and brittleness, it is difficult to process mechanically SiC single crystal substrates. In this paper, based on the study of the material removal mechanism of SiC single crystal, the process of ultrasonic lapping and the material removal mechanism of material were simulated by the nonlinear finite element program Ls-dyna. Then, a series of experiments are carried out to demonstrate the validity of simulation. The simulation and experiments results show that compared with conventional lapping, ultrasonic lapping decreases surface roughness by about 50% and increase material removal rate by 100%.