Influence on accelerated soft error rate in static random access memory using metal plate capacitor structure

被引：0
|
作者：
Kim, Do-Woo [1 ]
Gong, Myeong-Kook [2 ]
Wang, Jin-Suk [3 ]
机构：
[1] Department of Digital Design, Korea Women's Polytechnic, Ansung-si, Kyunggi 456-719, Korea, Republic of
[2] R and D Center, Optoway, Inc., Sinil-dong, Daeduck-gu, Daejeon 306-230, Korea, Republic of
[3] Department of Electronics Engineering, Chungnam National University, Cung-dong, Yuseong-gu, Daejeon 305-764, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 9 A期
关键词：
We compared and analyzed accelerated soft error rate (ASER) for several cell structures and metal plate (MP) capacitor in the fabricated 16 mega static random access memory (SRAM). Application of the buried N-well (BNW) lowered the ASER value compared to the normal well and buried P-well (BPW) structure. By applying the new MP capacitor with the BNW in SRAM; the lowest ASER value can be obtained. The thinner oxide thickness of the MP capacitor provides higher capacitance and lower ASER value. The ASER is improved from 5492 failure in time (FIT) to 1030 FIT on 2.4 V after sole application of the BNW. However; it is dramatically improved to 15 FIT once the MP capacitor is additionally applied. © 2006 The Japan Society of Applied Physics;
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页码：6837 / 6840
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