Effects of SiON passivation layer on reliability of GaN based green LED on silicon substrate

被引：2
|
作者：
Qiu H. [1 ]
Liu J.-L. [1 ]
Wang L. [1 ]
Jiang F.-Y. [1 ]
机构：
[1] National Engineering Technology Research Center for LED on Si Substrate, Nanchang University
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2011年 / 32卷 / 06期
关键词：
GaN; LED; Luminous decay; Si substrate; SiON;
D O I：
10.3788/fgxb20113206.0603
中图分类号：
学科分类号：
摘要：
The green LED with vertical structure was fabricated by transferring the epilayers of GaN-based LED grown on Si (111) substrate to a new Si substrate. Four groups of LED with chip size of 200 μm×200 μm were fabricated, labeled as sample A, B, C and D, respectively. Sample A was uncoated. Top surface of sample B, sidewall of sample C and both top surface and sidewall of sample D were coated with SiON passivation layer under the same experimental condition. Electrical and optical properties were investigated after 168 hours accelerated aging under 60 mA DC current at room temperature. The results show that the sidewall-SiON layer could decrease the generation of non-recombination centers in the active layer. Thus it could reduce leakage currents and the luminous decay. Comparing to the top-surface SiON, the sidewall SiON played a decisive role in improving the reliability of the LED.
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页码：603 / 607
页数：4
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