Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

被引：7
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作者：
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
不详 [2 ]
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来源：
Chin. Phys. Lett. | 2008年 / 6卷 / 2277-2280期
关键词：
20;
D O I：
10.1088/0256-307X/25/6/097
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